Growth of (101¯1) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator

The growth and characterization of ( 10 1 ¯ ) semipolar GaN buffer, InGaN multiple quantum wells (MQWs), light-emitting diode (LED) structure on patterned silicon-on-insulator (SOI) substrates, implementing the aspect ratio technique (ART), are reported. early stages result in continuous uniform stripes with small height variations that cause formation chevrons. Three coalescence strategies tested to improve surface morphology optical quality. Scanning electron microscopy identifies no crack but undulations surface. A roughness ≈10 nm is measured by atomic force large areas. impact MQW temperature shows similar terms roughness. Room photoluminescence spectra show wavelength emission redshifting when decreasing temperature. Room-temperature cathodoluminescence (CL) highlights first presence threading dislocations (TDs) between boundary despite use ART technique. Second, CL a spatially homogeneous around 485 only perturbed lower-wavelength (455 nm) arising from Blue LED structures exhibit at 450 nm, having crack-free surface, ≈5 nm. These results pave way for fabrication micro-LEDs SOI substrates.